[80]”Reverse Characterization Prediction of Diamond Schottky Barrier Power Devices using Machine Learning: Predicting Breakdown Voltage and Baliga Figure of Merit”
A. Abdelrahman, S. Ohmagari, T. Yoshitake
under review (2024).
[79]”Effect of electrically aligned polycrystalline diamond flakes on the through-plane thermal conductivity of heat conduction sheets”
M. Inaba, S. Seike, T. Chen, S. Ichiki, Y. Kubota, S. Ohmagari, M. Nakano, J. Suehiro
under review (2024).
[78] “Enlargement of effective area in Schottky barrier diodes on heteroepitaxial (001) diamond substrates by defect reduction and their radiation tolerance”
P. Sittimart, Y. Sasaguri, S. Tunmee, T. Yoshitake, K. Ishiji and S. Ohmagari
Diam. Relat. Mater. (2024).
[77] “Determination of low concentrations of mercury based on the electrodeposition time”
K. Takemura, W. Iwasaki, N. Morita, S. Ohmagari, T. Takagi, H. Fukaura, and K. Kikunaga
Nanomaterials, 14, 981 (2024).
[76] “Electrochemical fingerprinting of complex solutions using boron-doped diamond electrodes: Advanced classifications by machine learning”
R. Arita, N. Morita, K. Takemura, W. Iwasaki, S. Ueda, S. Ohmagari
Diam. Relat. Mater. 144, 110951 (2024).
[75] ”Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface”
A. Otake, T. Nishida, S. Ohmagari, Y. Einaga
JACS Au 4, 1184 (2024).
[74] “Carrier trapping in a diamond Schottky barrier diode”
S. Nunomura, I. Sakata, T. Nishida, S. Ohmagari
Appl. Phys. Lett. 124, 073505 (2024).
[73] “Quantification of Caffeine in Coffee Cans Using Electrochemical Measurements, Machine Learning, and Boron-doped Diamond Electrodes”
T. Honda, K. Takemura, S. Matsumae, N. Morita, W. Iwasaki, R. Arita, S. Ueda, Y. W. Liang, O. Fukuda, K. Kikunaga, S. Ohmagari
Plos one (2024) 19, 1-14.
[72] “3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D
micro-X-ray topography”
K. Ishiji, A. Yoneyama, M. Inaba, K. Fukuda, A. Sakaki, S. Ohmagari, R. Sugie
Jpn. J. Appl. Phys. 63, 02SP25 (2024).
[71] “Maximizing visible Raman resolution of nanodiamond grains fabricated by coaxial arc plasma deposition through oxygen plasma etching optimization”
S. M. Valappil, A. Zkria, P. Sittimart, S. Ohmagari, T. Yoshitake
Surf. Interface Anal. 1-9 (2024). DOI: 10.1002/sia.7289
[70] “Revealing mechanical and structural properties of Si-doped nanodiamond composite films through applied biasing voltages on WC-Co substrates”
M. R. Diab, M. Egiza, K. Murasawa, S. Ohmagari, H. Naragino, T. Yoshitake
Int. J. Refract. Met. Hard Mater. 119, 106518 (2024).
[69] “[Review] Single-crystal diamond growth by hot-filament CVD: a recent advances for
doping, growth rate and defect controls”
S. Ohmagari
Functional Diamond 3, 2259941 (2023). https://doi.org/10.1080/26941112.2023.2259941
[68] “Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering”
T. Kusaba, P. Sittimart, Y. Katamune, T. Kageura, H. Naragino, S. Ohmagari, S. M. Valappil, S. Nagano, A. Zkria, T. Yoshitake
Appl. Phys. Express 16, 105503 (2023).
[67] “Thermally Stable and Radiation-Proof Visible-Light Photodetectors Made from N-Doped Diamond”
P. Sittimart, S. Ohmagari, H. Umezawa, H. Kato, K. Ishiji, T. Yoshitake
Adv. Opt. Mater. 2203006 (2023)
[66] “High electro-mechanical coupling coefficient SAW device with ScAlN on Diamond”
K. Hatashita, T. Tsuchiya, M. Okazaki, M. Nakano, A. Anggraini, K. Hirata, S. Ohmagari, M. Uehara, H. Yamada, M. Akiyama and S. Shikata
Jpn. J. Appl. Phys. 62, 021003 (2023).
[65] “Corrosion-resistive and Low Specific Contact Resistance Ohmic Contacts to Semiconducting Diamonds Using Nanocarbon electrodes”
S. M. Valappil, A. Zkria, S. Ohmagari, H. Naragino, H. Kato, and T. Yoshitake
Phys. Sta. Solidi A 2200627 (2022).
[64]”Overcoming the impact of post-annealing on uniformity of diamond (100) Schottky barrier diodes through corrosion-resistant nanocarbon ohmic contacts”
S. M. Valappil, A. Zkria, S. Ohmagari, and T. Yoshitake
Mater. Res. Express 9 (2022) 115901
[63]”Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding”
Y. Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, J. Liang and N. Shigekawa
Diam. Relat. Mater. 130, 109425 (2022).
[62]”Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application”
S. M. Valappil, S. Ohmagari, A. Zkria, P.Sittimart, E. Abubakr, H. Kato, and T. Yoshitake
AIP advances 12, 085007 (2022).
[61]”Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation”
E. Abubakr, S. Ohmagari, A. Zkria, H. Ikenoue, J. Pernot, T. Yoshitake
Mater. Res. Lett. 10, 666 (2022).
[60]”Comparison of thermal stabilities of p+-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes”
Y. Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, J. Liang, N. Shigekawa
Jpn. J. Appl. Phys. 61, SF1009 (2022).
[59]”Impact of Laser-Induced Graphitization on Diamond Schottky Barrier Diodes”
T. Iwao, P. Sittimart, T. Yoshitake, H. Umezawa, and S. Ohmagari
Physica Status Solidi A 219, 21008 (2022). Selected as a Front cover
[58]”Characterization of mosaic diamond wafers and hot-filament epilayers by using HR-EBSD technics”
K. Tanaka, S. Ohmagari, M. Tachiki, M. Takano, H. Umezawa, A. Chayahara, and H. Yamada
Diam. Relat. Mater. 123 (2022) 108839.
[57]”Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors”
E. Abubakr, S. Ohmagari, A. Zkria, H. Ikenoue, and T. Yoshitake
Mater. Sci. Semicond. Process, 139, 106370 (2022).
[56]”Fabrication of p+-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties”
Y. Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, J. Liang, and N. Shigekawa
Diam. Relat. Mater. 120, 108665 (2021).
[55]”Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding”
P. Sittimart, S. Ohmagari, T. Matsumae, H. Umezawa, and T. Yoshitake
AIP advances 11, 105114 (2021). https://doi.org/10.1063/5.0062531
[54]”Direct-drive implosion experiment of diamond capsules fabricated with hot filament chemical vapor deposition technique”
K. Kawasaki, D. Tanaka, H. Yamada, S. Ohmagari, Y. Mokuno, A. Chayahara, T. Tamagawa, Y. Hironaka, K. Yamanoi, M. Tsukamoto, Y. Sato, T. Somekawa, H. Nagatomo, K. Mima, and K. Shigemori
Physics of Plasmas 28, 104501 (2021)
[53]”Distinguishing dislocation densities in intrinsic layers of pin diamond diodes using two photon-excited photoluminescence imaging”
T. Honbu, D. Takeuchi, K. Ichikawa, S. Ohmagari, T. Teraji, M. Ogura, H. Kato, T. Makino, and I. Shoji
Diam. Relat. Mater. 117, 108463 (2021)
[52]”Radiation hardened H-diamond MOSFET (RADDFET) operating after 1 MGy irradiation”
T. Yamaguchi, H. Umezawa, S. Ohmagari, H. Koizumi, and J.H. Kaneko
Appl. Phys. Lett. 118, 162105 (2021)
[51]”High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers”
T. Hanada, S. Ohmagari, J. H. Kaneko, and H. Umezawa
Hanada and Ohmagari contributed equally to this work
Appl. Phys. Lett. 117, 262107 (2020).
[50]”Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates”
P. Sittimart, S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 60, SBBD05 (2021).
[49] “Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces”
E. Abubakr, A. Zkria, S. Ohmagari, Y. Katamune, H. Ikenoue, and T. Yoshitake
ACS Appl. Mater. Interfaces 12, 57619 (2020).
[48]”Dependences of Morphology and Surface Roughness on Growth Conditions of Diamond Capsules for the Direct-Drive Inertial Confinement Fusion”
T. Iwasaki, K. Kawasaki, H. Yamada, S. Ohmagari, D. Takeuchi, A. Chayahara, Y. Mokuno, Y. Hironaka, and K. Shigemori
High Ener. Density Phys. 37, 100849 (2020).
[47] “Suppression of killer defects in diamond vertical-type Schottky barrier diodes”
A. Kobayashi, S. Ohmagari (Corr. Author), H. Umezawa, D. Takeuchi, and T. Saito
Jpn. J. Appl. Phys. 59, SGGD10 (2020).
[46] “Toward High-Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal-Assisted Termination”
S. Ohmagari, H. Yamada, N. Tsubouchi, H. Umezawa, A. Chayahara, Y. Mokuno, and D. Takeuchi
Phys. Status Solidi A 1900498 (2019). FEATURE ARTICLE DOI: 10.1002/pssa.201900498
[45] “Doping-induced strain in heavily B-doped (100) diamond films prepared by hot-filament chemical vapor deposition”
S. Ohmagari, H. Yamada, H. Umezawa, A. Chayahara, Y. Mokuno
Thin solid films 680, 85 (2019).
[44] “Thermally stable heavily boron-doped diamond resistors fabricated via selective area growth by hot-filament chemical vapor deposition”
S. Suzuki, S. Ohmagari (Corr. Author), H. Kawashima, T. Saito, H. Umezawa, and D. Takeuchi
Thin solid films 680, 81 (2019).
[43] “Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation”
E. Abubakr, A. Zkria, Y. Katamune, S. Ohmagari, K. Imokawa, H. Ikenoue, and T. Yoshitake
Diam. Relat. Mater. 95, 166 (2019).
[42] “Schottky barrier diodes fabricated on diamond mosaic wafers: dislocation reduction to mitigate the effect of coalescence boundaries”
S. Ohmagari, H. Yamada, N. Tsubouchi, H. Umezawa, A. Chayahara, A. Seki, F. Kawaii, H. Saitoh, and Y. Mokuno
Appl. Phys. Lett. 114, 082104 (2019). Editor’s pick https://doi.org/10.1063/1.5085364
[41] “Improved drain current of diamond metal-semiconductor field-effect transistor by selectively grown p+ contact layer”
H. Kawashima, S. Ohmagari, H. Umezawa, and D. Takeuchi
Jpn. J. Appl. Phys. 58, SBDD17 (2019).
[40]”Ga2O3/Si and Al2O3/Si Room-Temperature Wafer Bonding Using in-Situ Deposited Si Thin Film”
H. Takagi, Y. Kurashima, T. Matsumae, T. Ito, H. Watanabe, H. Umezawa, and S. Ohmagari
ECS Transactions 86 (2018) 169. DOI: 10.1149/08605.0169ecst
[39]”Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations”
S. Ohmagari, H. Yamada, N. Tsubouchi, H. Umezawa, A. Chayahara, S. Tanaka, and Y. Mokuno
Appl. Phys. Lett. 113 (2018) 032108. https://doi.org/10.1063/1.5040658
[38]”Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current”
K. Driche, H. Umezawa, S. Ohmagari, H. Okumura, Y. Mokuno, and E. Gheeraert
Mater. sci. forum. 924 (2018) 935. DOI: 10.4028/www.scientific.net/MSF.924.935
[37] “Growth and characterization of heavily B-doped p+ diamond for vertical power devices”
Shinya Ohmagari
In: S. Koizumi, H. Umezawa, J. Pernot, M. Suzuki (Eds), Power Electronics Device Applications of Diamond Semiconductors, A volume in Woodhead Publishing Series in Electronic and Optical Materials, 99 – 117 Chapter 2.1 (Elsevier 2018).
[36]”Synthesis and characterization of diamond capsules for direct-drive inertial confinement fusion”
Hiroki Kato, H. Yamada, S. Ohmagari, A. Chayahara, Y. Mokuno, Y. Fukuyama, N. Fujiwara, K. Miyanishi, Y. Hironaka, and K. Shigemori
Diam. Relat. Mater. 86 (2018) 15.
[35]”Junction parameters of boron-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite/n-type silicon heterojunctions formed by pulsed laser deposition”
R. Chaleawpong, N. Promros, P. Charoenyuenyao, T. Hanada, S. Ohmagari, A. Zkria, and T. Yoshitake
J. Nanoelect. Nanotechnol.(2017) to be published
[34]”Photoconduction of p-type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films in Metal-Semiconductor-Metal Geometry”
T. Hanada, S. Ohmagari, A. Zkria, and T. Yoshitake
J. Phys. Conf. Series (2017) to be published
[33]”Growth and characterization of freestanding p+ diamond (100) substrates prepared by hot-filament chemical vapor deposition”
S. Ohmagari, H. Yamada, H. Umezawa, N. Tsubouchi, A. Chayahara, and Y. Mokuno
Diamond and Related Materials 81 (2018) 33. https://doi.org/10.1016/j.diamond.2017.11.003
[32]”Lifetime and migration length of B-related admolecules on diamond {100}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition”
S. Ohmagari, M. Ogura, H. Umezawa, and Y. Mokuno
Journal of Crystal Growth 479 (2017) 52. https://doi.org/10.1016/j.jcrysgro.2017.09.022
[31]”Characterization of X-Ray Radiation Hardness of Diamond Schottky Barrier Diode and Metal-Semiconductor Field-Effect Transistor”
H. Umezawa, S. Ohmagari, Y. Mokuno, and J.H. Kaneko
IEEE Conference Publications, ISPSD (2017) 379-382. 10.23919/ISPSD.2017.7988983
[30]”Submicron-scale diamond selective-area growth by hot-filament chemical vapor deposition”
S. Ohmagari, T. Matsumoto, H. Umezawa, and Y. Mokuno
Thin Solid Films 615 (2016) 239. http://dx.doi.org/10.1016/j.tsf.2016.07.017
[29]”Photodetection characteritics of heterojunctions comprising p-Type ultrananocrystalline diamond films and n-type Si substrates at low temperatures”
T. Hanada, S. Ohmagari, A. Zkria, N. Promros, and T. Yoshitake
J. Nanosci. Nanotech. 17 (2016) 3348. https://doi.org/10.1166/jnn.2017.14104
[28]”Ohmic contact formation to heavily boron-doped p+ diamond prepared by hot-filament chemical vapor deposition”
S. Ohmagari, T. Matsumoto, H. Umezawa, and Y. Mokuno
MRS Advances 1 (2016) 3489. https://doi.org/10.1557/adv.2016.471
[27]”Factors to control uniformity of single crystal diamond growth by using microwave plasma CVD”
H. Yamada, A. Chayahara, S. Ohmagari, Y. Mokuno
Diamond Relat. Mater. 63 (2016) 17. doi:10.1016/j.diamond.2015.09.016
[26]”Boron inhomogeneity of HPHT-grown single-crystal diamond substrates: confocal micro-Raman mapping investigations”
K. Srimongkon, S. Ohmagari (C.A.), Y. Kato, V. Amornkitbamrung, and S. Shikata
Diamond Relat. Mater. 63 (2016) 21. doi: 10.1016/j.diamond.2015.09.014
[25]”Hydrogenetion effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition”
Y. Katamune, S. Takeichi, S. Ohmagari, and T. Yoshitake
J. Vac. Sci. Technol. A 33 (2015) 061514.
[24]”Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition”
S. Ohmagari, K. Srimongkon, H. Yamada, H. Umezawa, N. Tsubouchi, A. Chayahara, S. Shikata, and Y. Mokuno
Diamond Relat. Mater. 58 (2015) 110.
[23] “Near-Edge X-ray Absorption Fine-Structure Study on Hydrogenated Boron-Doped Ultrananocrystalline Diamond/Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition”
Y. Katamune, S. Takeichi, S. Ohmagari, H. Setoyama, and T. Yoshitake
Trans. Mat. Res. Soc. 40 (2015) 243.
[22] “Unintentional tungsten incorporation in diamond during hot-filament chemical vapor deposition”
S. Ohmagari, K. Srimongkon, V. Amornkitbamrung, H. Yamada, A. Chayahara, and S. Shikata
Trans. Mat. Res. Soc. Jpn, 40 (2015) 47.
[21] “Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition”
S. Ohmagari, H. Yamada, H. Umezawa, A. Chayahara, T. Teraji, and S. Shikata
Diamond Relat. Mater. 48 (2014) 19.
[20] “Carrier Transport and Photodetection in Heterojunction Photodiodes Comprising n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films”
S. Ohmagari, T. Hanada, Y. Katamune, S. Al-Riyami, and T. Yoshitake
Jpn. J. Appl. Phys. 53 (2014) 050307.
[19] “Heterojunction Diodes Comprising p-Type Ultra-nanocrystalline Diamond Films Prepared by Coaxial Arc Plasma Deposition and n-Type Silicon Substrates”
Y. Katamune, S. Ohmagari, S. Al-Riyami, S. Takagi, M. Shaban, and T. Yoshitake
Jpn. J. Appl. Phys., 52 (2013) 065801.
[18] “Formation of p-Type Ultrananocrystalline Diamond/Nonhydrogenated Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition with Boron-Incorporated Graphite Targets”
Y. Katamune, S. Ohmagari, H. Setoyama, K. Sumitani, Y. Hirai, and T. Yoshitake
ECS Transactions 50 (2013) 23.
[17] “物理気相成長法による超ナノ微結晶ダイヤモンドの生成とドーピングによる結晶粒成長促進効果”
大曲 新矢，花田 賢志，片宗 優貴，吉田 智博，吉武 剛
日本結晶成長学会誌, Vol. 39, No. 4 (2012) pp. 196-203.
[16] “超ナノ微結晶ダイヤモンド/水素化アモルファスカーボン混相膜の受光素子への応用” 大曲 新矢, 吉武 剛
表面科学，Vol. 33, No. 10 (2012) pp. 583-588.
[15] “Deep-Ultraviolet Light Detection of p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films”
S. Ohmagari and T. Yoshitake
Appl. Phys. Express 6 (2012) 065202.
[14] “p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition and Their Application to Photodetectors”
S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 090123.
Selected Topics in Applied Physics (STAP) “Diamond Semiconductors: from Materials to Devices”
[13] “Boron-Induced Dramatically Enhanced Growth of Diamond Grains in Nanocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films deposition by Coaxial Arc Plasma Deposition”
Y. Katamune, S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 078003.
[12] “Aluminum Incorporation Effects on Diamond Grain Growth in Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition”
Y. Katamune, S. Ohmagari, I. Suzuki, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 068002.
[11] “Enhanced growth of diamond grains in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron-doping”
S. Ohmagari, Y. Katamune, H. Ichinose, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 025503.
[10] “Non-destructive detection of killer defects of diamond Schottky barrier diode”
S. Ohmagari, T. Teraji, and Y. Koide
J. Appl. Phys. 110 (2011) 056105.
[9] “Near-Edge X-ray Absorption Fine-Structure Spectroscopic Study on Nitrogen-Doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition”
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 50 (2011) 08JD05.
[8] “Fourier Transform Infrared Spectroscopic Study of Nitrogen-Doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed laser Deposition”
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Diamond Relat. Mater. 20 (2011) 1072.
[7] “Heterojunction diodes comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films”
S. Ohmagari, S.Al-Riyami, and T. Yoshitake
Jpn. J. Appl. Phys. 50 (2011) 03510.
[6] “Electrical Properties and Chemical Bonding Structures of Nitrogen-doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition”
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Appl. Phys. Express, 3 (2010) 115102.
[5] “X-ray photoemission spectroscopic study of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition”
S. Ohmagari, T. Yoshitake, A. Nagano, R. Ohtani, H. Setoyama, E. Kobayashi, and K. Nagayama
Diamond Rel. Mater. 19 (2010) 911.
[4] “X-ray Photoemission Spectroscopy of Nitrogen-Doped UNCD /a-C:H Films Prepared by Pulse Laser Deposition”
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Diamond Rel. Mater. 19 (2010) 510.
[3] “Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping”
S. Ohmagari, T. Yoshitake , A. Nagano, R. Ohtani, H. Setoyama, E. Kobayashi, T. Hara, and K. Nagayama
Jpn. J. Appl. Phys. 49 (2010) 031302.
[2] “Near-edge X-ray absorption fine-structure of ultrananocrystalline diamond/amorphous carbon films prepared by pulsed laser deposition”
S. Ohmagari, T. Yoshitake, A. Nagano, S. AL-Riyami, R. Ohtani, H. Setoyama, E. Kobayashi and K. Nagayama
J. Nanomater. 2009 (2010) 876561.
[1] “Near-edge X-ray absorption fine-structure, X-ray photoemission, Fourier transfer infrared spectroscopies of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films”
T. Yoshitake, A. Nagano, S. Ohmagari, M. Itakura, N. Kuwano, R. Ohtani, H. Setoyama, E. Kobayashi, and K. Nagayama
Jpn. J. Appl. Phys., vol. 48, No. 2 (2009) 020222.