[84]”Tuning sp3\/sp2 carbon ratio of heavily boron-doped diamond electrodes fabricated via hot-filament chemical vapour deposition with CO2 addition”<\/p>\n\n\n\n
T. Kageura, K. Takemura, M. Maeda, A. Otake, Y. Einaga, and S. Ohmagari<\/p>\n\n\n\n
Sci. Rep. 15<\/strong>, 41095 (2025).<\/p>\n\n\n\n <\/p>\n\n\n\n [83]”Heteroepitaxial Growth of\u00a0\u03b2<\/em>-Ga2<\/sub>O3<\/sub>\u00a0on Diamond (111) via Radio Frequency Magnetron Sputtering: Mechanistic Insights from Scanning\/Transmission Electron Microscopy”<\/p>\n\n\n\n Itsuki Misono, Sho Nekita, Hongye Gao, Sreenath Mylo Valappil, Yixin Wang, Yuto Ikegami, Yuki Katamune, Hiroshi Naragino, Phongsaphak Sittimart, Shinya Ohmagari, Abdelrahman Zkria, Satoshi Hata, Tsuyoshi Yoshitake<\/p>\n\n\n\n Small 21<\/strong>, e07322 (2025).<\/p>\n\n\n\n <\/p>\n\n\n\n [82]”Harsh Environment-immune All-carbon Visible Light Photodetector: Sensitivity Improvement by Nitrogen-vacancy Center Density Enhancement through Electron Irradiation”<\/p>\n\n\n\n Sreenath Mylo Valappil, Taisuke Kageura, Shinya Ohmagari, Shinobu Onoda, Phongsaphak Sittimart, Hiroshi Naragino, Tsuyoshi Yoshitake [81]”Enhancing the Reverse Threshold Limit for Heteroepitaxial Diamond-Based Pseudovertical Schottky Diodes: Dependency on the Metal Contact Size”<\/p>\n\n\n\n A. Abdelrahman, S. Ohmagari (C.A.), T. Yoshitake<\/p>\n\n\n\n ACS Appl. Electron. Mater. 6<\/strong>, 6303 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [80]”Reverse Characterization Prediction of Diamond Schottky Barrier Power Devices using Machine Learning: Predicting Breakdown Voltage and Baliga Figure of Merit”<\/p>\n\n\n\n A. Abdelrahman, S. Ohmagari (C.A.), T. Yoshitake<\/p>\n\n\n\n Diamond and Relat. Mater. 149<\/strong>, 111645 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [79]”Effect of electrically aligned polycrystalline diamond flakes on the through-plane thermal conductivity of heat conduction sheets”<\/p>\n\n\n\n M. Inaba, S. Seike, Y. Chen, S. Ichiki, Y. Kubota, S. Ohmagari, M. Nakano, J. Suehiro<\/p>\n\n\n\n Func. Diam. 4<\/strong>, 2423643 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [78] “Enlargement of effective area in Schottky barrier diodes on heteroepitaxial (001) diamond substrates by defect reduction and their radiation tolerance”<\/p>\n\n\n\n P. Sittimart, Y. Sasaguri, S. Tunmee, T. Yoshitake, K. Ishiji and S. Ohmagari<\/p>\n\n\n\n Diam. Relat. Mater. 147<\/strong>, 111346 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [77] “Determination of low concentrations of mercury based on the electrodeposition time”<\/p>\n\n\n\n K. Takemura, W. Iwasaki, N. Morita, S. Ohmagari, T. Takagi, H. Fukaura, and K. Kikunaga<\/p>\n\n\n\n Nanomaterials, 14<\/strong>, 981 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [76] “Electrochemical fingerprinting of complex solutions using boron-doped diamond electrodes: Advanced classifications by machine learning”<\/p>\n\n\n\n R. Arita, N. Morita, K. Takemura, W. Iwasaki, S. Ueda, S. Ohmagari<\/p>\n\n\n\n Diam. Relat. Mater. 144<\/strong>, 110951 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [75] \u201dSluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface”<\/p>\n\n\n\n A. Otake, T. Nishida, S. Ohmagari, Y. Einaga<\/p>\n\n\n\n JACS Au 4<\/strong>, 1184 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [74] “Carrier trapping in a diamond Schottky barrier diode”<\/p>\n\n\n\n S. Nunomura, I. Sakata, T. Nishida, S. Ohmagari<\/p>\n\n\n\n Appl. Phys. Lett. 124<\/strong>, 073505 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [73] “Quantification of Caffeine in Coffee Cans Using Electrochemical Measurements, Machine Learning, and Boron-doped Diamond Electrodes”<\/p>\n\n\n\n T. Honda, K. Takemura, S. Matsumae, N. Morita, W. Iwasaki, R. Arita, S. Ueda, Y. W. Liang, O. Fukuda, K. Kikunaga, S. Ohmagari<\/p>\n\n\n\n Plos one (2024) 19<\/strong>, 1-14.<\/p>\n\n\n\n <\/p>\n\n\n\n [72] “3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D K. Ishiji, A. Yoneyama, M. Inaba, K. Fukuda, A. Sakaki, S. Ohmagari, R. Sugie<\/p>\n\n\n\n Jpn. J. Appl. Phys. 63<\/strong>, 02SP25 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [71] “Maximizing visible Raman resolution of nanodiamond grains fabricated by coaxial arc plasma deposition through oxygen plasma etching optimization”<\/p>\n\n\n\n S. M. Valappil, A. Zkria, P. Sittimart, S. Ohmagari, T. Yoshitake<\/p>\n\n\n\n Surf. Interface Anal. 1-9 (2024). DOI: 10.1002\/sia.7289<\/p>\n\n\n\n <\/p>\n\n\n\n [70] “Revealing mechanical and structural properties of Si-doped nanodiamond composite films through applied biasing voltages on WC-Co substrates”<\/p>\n\n\n\n M. R. Diab, M. Egiza, K. Murasawa, S. Ohmagari, H. Naragino, T. Yoshitake<\/p>\n\n\n\n Int. J. Refract. Met. Hard Mater. 119<\/strong>, 106518 (2024).<\/p>\n\n\n\n <\/p>\n\n\n\n [69] “[Review] Single-crystal diamond growth by hot-filament CVD: a recent advances for S. Ohmagari<\/p>\n\n\n\n Functional Diamond 3<\/strong>, 2259941 (2023). https:\/\/doi.org\/10.1080\/26941112.2023.2259941<\/p>\n\n\n\n <\/p>\n\n\n\n [68] “Heteroepitaxial growth of \u03b2<\/em>-Ga2<\/sub>O3<\/sub> thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering”<\/p>\n\n\n\n T. Kusaba, P. Sittimart, Y. Katamune, T. Kageura, H. Naragino, S. Ohmagari, S. M. Valappil, S. Nagano, A. Zkria, T. Yoshitake<\/p>\n\n\n\n Appl. Phys. Express 16<\/strong>, 105503 (2023).<\/p>\n\n\n\n <\/p>\n\n\n\n [67] “Thermally Stable and Radiation-Proof Visible-Light Photodetectors Made from N-Doped Diamond”<\/p>\n\n\n\n P. Sittimart, S. Ohmagari, H. Umezawa, H. Kato, K. Ishiji, T. Yoshitake<\/p>\n\n\n\n Adv. Opt. Mater. 2203006 (2023)<\/p>\n\n\n\n <\/p>\n\n\n\n [66] “High electro-mechanical coupling coefficient SAW device with ScAlN on Diamond”<\/p>\n\n\n\n K. Hatashita, T. Tsuchiya, M. Okazaki, M. Nakano, A. Anggraini, K. Hirata, S. Ohmagari, M. Uehara, H. Yamada, M. Akiyama and S. Shikata<\/p>\n\n\n\n Jpn. J. Appl. Phys. 62, 021003 (2023).<\/p>\n\n\n\n [65] “Corrosion-resistive and Low Specific Contact Resistance Ohmic Contacts to Semiconducting Diamonds Using Nanocarbon electrodes”<\/p>\n\n\n\n S. M. Valappil, A. Zkria, S. Ohmagari, H. Naragino, H. Kato, and T. Yoshitake<\/p>\n\n\n\n Phys. Sta. Solidi A 2200627 (2022).<\/p>\n\n\n\n <\/p>\n\n\n\n [64]”Overcoming the impact of post-annealing on uniformity of diamond (100) Schottky barrier diodes through corrosion-resistant nanocarbon ohmic contacts”<\/p>\n\n\n\n S. M. Valappil, A. Zkria, S. Ohmagari, and T. Yoshitake<\/p>\n\n\n\n Mater. Res. Express 9 (2022) 115901<\/p>\n\n\n\n <\/p>\n\n\n\n [63]”Electrical properties of Si\/diamond heterojunction diodes fabricated by using surface activated bonding” [62]”Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application” [61]”Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation” [60]”Comparison of thermal stabilities of p+-Si\/p-diamond heterojunction and Al\/p-diamond Schottky barrier diodes” [59]”Impact of Laser-Induced Graphitization on Diamond Schottky Barrier Diodes” [58]”Characterization of mosaic diamond wafers and hot-filament epilayers by using HR-EBSD technics” [57]”Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors” [56]”Fabrication of p+-Si\/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties” [55]”Diamond\/\u03b2-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding” [54]”Direct-drive implosion experiment of diamond capsules fabricated with hot filament chemical vapor deposition technique” [53]”Distinguishing dislocation densities in intrinsic layers of pin diamond diodes using two photon-excited photoluminescence imaging” [52]”Radiation hardened H-diamond MOSFET (RADDFET) operating after 1 MGy irradiation” [51]”High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers” [50]”Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates” [49] “Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces” [48]”Dependences of Morphology and Surface Roughness on Growth Conditions of Diamond Capsules for the Direct-Drive Inertial Confinement Fusion” [47] “Suppression of killer defects in diamond vertical-type Schottky barrier diodes” [46] “Toward High-Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal-Assisted Termination” [45] “Doping-induced strain in heavily B-doped (100) diamond films prepared by hot-filament chemical vapor deposition” [44] “Thermally stable heavily boron-doped diamond resistors fabricated via selective area growth by hot-filament chemical vapor deposition” [43] “Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation” [42] “Schottky barrier diodes fabricated on diamond mosaic wafers: dislocation reduction to mitigate the effect of coalescence boundaries” [41] “Improved drain current of diamond metal-semiconductor field-effect transistor by selectively grown p+ contact layer” [40]”Ga2O3\/Si and Al2O3\/Si Room-Temperature Wafer Bonding Using in-Situ Deposited Si Thin Film” [39]”Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations” [38]”Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current” [37] “Growth and characterization of heavily B-doped p+ diamond for vertical power devices” [36]”Synthesis and characterization of diamond capsules for direct-drive inertial confinement fusion” [35]”Junction parameters of boron-doped p-type ultrananocrystalline diamond\/hydrogenated amorphous carbon composite\/n-type silicon heterojunctions formed by pulsed laser deposition” [34]”Photoconduction of p-type Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films in Metal-Semiconductor-Metal Geometry” [33]”Growth and characterization of freestanding p+ diamond (100) substrates prepared by hot-filament chemical vapor deposition” [32]”Lifetime and migration length of B-related admolecules on diamond {100}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition” [31]”Characterization of X-Ray Radiation Hardness of Diamond Schottky Barrier Diode and Metal-Semiconductor Field-Effect Transistor” [30]”Submicron-scale diamond selective-area growth by hot-filament chemical vapor deposition” [29]”Photodetection characteritics of heterojunctions comprising p-Type ultrananocrystalline diamond films and n-type Si substrates at low temperatures” [28]”Ohmic contact formation to heavily boron-doped p+ diamond prepared by hot-filament chemical vapor deposition” [27]”Factors to control uniformity of single crystal diamond growth by using microwave plasma CVD” [26]”Boron inhomogeneity of HPHT-grown single-crystal diamond substrates: confocal micro-Raman mapping investigations” [25]”Hydrogenetion effects on carrier transport in boron-doped ultrananocrystalline diamond\/amorphous carbon films prepared by coaxial arc plasma deposition” [24]”Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition” [23] “Near-Edge X-ray Absorption Fine-Structure Study on Hydrogenated Boron-Doped Ultrananocrystalline Diamond\/Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition” [22] “Unintentional tungsten incorporation in diamond during hot-filament chemical vapor deposition” [21] “Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition” [20] “Carrier Transport and Photodetection in Heterojunction Photodiodes Comprising n-Type Silicon and p-Type Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films” [19] \u201cHeterojunction Diodes Comprising p-Type Ultra-nanocrystalline Diamond Films Prepared by Coaxial Arc Plasma Deposition and n-Type Silicon Substrates\u201d [18] \u201cFormation of p-Type Ultrananocrystalline Diamond\/Nonhydrogenated Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition with Boron-Incorporated Graphite Targets\u201d [17] \u201c\u7269\u7406\u6c17\u76f8\u6210\u9577\u6cd5\u306b\u3088\u308b\u8d85\u30ca\u30ce\u5fae\u7d50\u6676\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u751f\u6210\u3068\u30c9\u30fc\u30d4\u30f3\u30b0\u306b\u3088\u308b\u7d50\u6676\u7c92\u6210\u9577\u4fc3\u9032\u52b9\u679c\u201d [16] \u201c\u8d85\u30ca\u30ce\u5fae\u7d50\u6676\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\/\u6c34\u7d20\u5316\u30a2\u30e2\u30eb\u30d5\u30a1\u30b9\u30ab\u30fc\u30dc\u30f3\u6df7\u76f8\u819c\u306e\u53d7\u5149\u7d20\u5b50\u3078\u306e\u5fdc\u7528\u201d \u5927\u66f2 \u65b0\u77e2, \u5409\u6b66 \u525b [15] \u201cDeep-Ultraviolet Light Detection of p-Type Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films\u201d [14] \u201cp-Type Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition and Their Application to Photodetectors\u201d [13] \u201cBoron-Induced Dramatically Enhanced Growth of Diamond Grains in Nanocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films deposition by Coaxial Arc Plasma Deposition\u201d [12] \u201cAluminum Incorporation Effects on Diamond Grain Growth in Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition\u201d [11] \u201cEnhanced growth of diamond grains in ultrananocrystalline diamond\/hydrogenated amorphous carbon composite films by boron-doping\u201d [10] \u201cNon-destructive detection of killer defects of diamond Schottky barrier diode\u201d [9] \u201cNear-Edge X-ray Absorption Fine-Structure Spectroscopic Study on Nitrogen-Doped Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition\u201d [8] \u201cFourier Transform Infrared Spectroscopic Study of Nitrogen-Doped Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed laser Deposition\u201d [7] \u201cHeterojunction diodes comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films\u201d [6] \u201cElectrical Properties and Chemical Bonding Structures of Nitrogen-doped Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition\u201d [5] \u201cX-ray photoemission spectroscopic study of ultrananocrystalline diamond\/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition\u201d [4] \u201cX-ray Photoemission Spectroscopy of Nitrogen-Doped UNCD \/a-C:H Films Prepared by Pulse Laser Deposition\u201d [3] \u201cFormation of p-Type Semiconducting Ultrananocrystalline Diamond\/Hydrogenated Amorphous Carbon Composite Films by Boron Doping\u201d [2] “Near-edge X-ray absorption fine-structure of ultrananocrystalline diamond\/amorphous carbon films prepared by pulsed laser deposition” [1] “Near-edge X-ray absorption fine-structure, X-ray photoemission, Fourier transfer infrared spectroscopies of ultrananocrystalline diamond\/hydrogenated amorphous carbon composite films” [84]”Tuning sp3\/sp2 carbon ratio of heavily boron-doped diamond electrodes fabricated via hot-filament c […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1],"tags":[],"class_list":["post-22","post","type-post","status-publish","format-standard","hentry","category-academic"],"_links":{"self":[{"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/posts\/22"}],"collection":[{"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/comments?post=22"}],"version-history":[{"count":31,"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/posts\/22\/revisions"}],"predecessor-version":[{"id":132,"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/posts\/22\/revisions\/132"}],"wp:attachment":[{"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/media?parent=22"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/categories?post=22"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/qmirai.v2005.coreserver.jp\/Shinya-Ohmagari\/index.php\/wp-json\/wp\/v2\/tags?post=22"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Small, 21<\/strong>, 2409876 (2025).<\/p>\n\n\n\n
micro-X-ray topography”<\/p>\n\n\n\n
doping, growth rate and defect controls”<\/p>\n\n\n\n
Y. Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, J. Liang and N. Shigekawa
Diam. Relat. Mater. 130, 109425 (2022).<\/p>\n\n\n\n
S. M. Valappil, S. Ohmagari, A. Zkria, P.Sittimart, E. Abubakr, H. Kato, and T. Yoshitake
AIP advances 12, 085007 (2022).<\/p>\n\n\n\n
E. Abubakr, S. Ohmagari, A. Zkria, H. Ikenoue, J. Pernot, T. Yoshitake
Mater. Res. Lett. 10, 666 (2022).<\/p>\n\n\n\n
Y. Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, J. Liang, N. Shigekawa
Jpn. J. Appl. Phys. 61, SF1009 (2022).<\/p>\n\n\n\n
T. Iwao, P. Sittimart, T. Yoshitake, H. Umezawa, and S. Ohmagari
Physica Status Solidi A 219, 21008 (2022). Selected as a Front cover<\/strong><\/p>\n\n\n\n
K. Tanaka, S. Ohmagari, M. Tachiki, M. Takano, H. Umezawa, A. Chayahara, and H. Yamada
Diam. Relat. Mater. 123 (2022) 108839.<\/p>\n\n\n\n
E. Abubakr, S. Ohmagari, A. Zkria, H. Ikenoue, and T. Yoshitake
Mater. Sci. Semicond. Process, 139, 106370 (2022).<\/p>\n\n\n\n
Y. Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, J. Liang, and N. Shigekawa
Diam. Relat. Mater. 120, 108665 (2021).<\/p>\n\n\n\n
P. Sittimart, S. Ohmagari, T. Matsumae, H. Umezawa, and T. Yoshitake
AIP advances 11, 105114 (2021). https:\/\/doi.org\/10.1063\/5.0062531<\/p>\n\n\n\n
K. Kawasaki, D. Tanaka, H. Yamada, S. Ohmagari, Y. Mokuno, A. Chayahara, T. Tamagawa, Y. Hironaka, K. Yamanoi, M. Tsukamoto, Y. Sato, T. Somekawa, H. Nagatomo, K. Mima, and K. Shigemori
Physics of Plasmas 28, 104501 (2021)<\/p>\n\n\n\n
T. Honbu, D. Takeuchi, K. Ichikawa, S. Ohmagari, T. Teraji, M. Ogura, H. Kato, T. Makino, and I. Shoji
Diam. Relat. Mater. 117, 108463 (2021)<\/p>\n\n\n\n
T. Yamaguchi, H. Umezawa, S. Ohmagari, H. Koizumi, and J.H. Kaneko
Appl. Phys. Lett. 118, 162105 (2021)<\/p>\n\n\n\n
T. Hanada, S. Ohmagari, J. H. Kaneko, and H. Umezawa
Hanada and Ohmagari contributed equally to this work
Appl. Phys. Lett. 117, 262107 (2020).<\/p>\n\n\n\n
P. Sittimart, S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 60, SBBD05 (2021).<\/p>\n\n\n\n
E. Abubakr, A. Zkria, S. Ohmagari, Y. Katamune, H. Ikenoue, and T. Yoshitake
ACS Appl. Mater. Interfaces 12, 57619 (2020).<\/p>\n\n\n\n
T. Iwasaki, K. Kawasaki, H. Yamada, S. Ohmagari, D. Takeuchi, A. Chayahara, Y. Mokuno, Y. Hironaka, and K. Shigemori
High Ener. Density Phys. 37, 100849 (2020).<\/p>\n\n\n\n
A. Kobayashi, S. Ohmagari (Corr. Author), H. Umezawa, D. Takeuchi, and T. Saito
Jpn. J. Appl. Phys. 59, SGGD10 (2020).<\/p>\n\n\n\n
S. Ohmagari, H. Yamada, N. Tsubouchi, H. Umezawa, A. Chayahara, Y. Mokuno, and D. Takeuchi
Phys. Status Solidi A 1900498 (2019). FEATURE ARTICLE DOI: 10.1002\/pssa.201900498<\/p>\n\n\n\n
S. Ohmagari, H. Yamada, H. Umezawa, A. Chayahara, Y. Mokuno
Thin solid films 680, 85 (2019).<\/p>\n\n\n\n
S. Suzuki, S. Ohmagari (Corr. Author), H. Kawashima, T. Saito, H. Umezawa, and D. Takeuchi
Thin solid films 680, 81 (2019).<\/p>\n\n\n\n
E. Abubakr, A. Zkria, Y. Katamune, S. Ohmagari, K. Imokawa, H. Ikenoue, and T. Yoshitake
Diam. Relat. Mater. 95, 166 (2019).<\/p>\n\n\n\n
S. Ohmagari, H. Yamada, N. Tsubouchi, H. Umezawa, A. Chayahara, A. Seki, F. Kawaii, H. Saitoh, and Y. Mokuno
Appl. Phys. Lett. 114, 082104 (2019). Editor’s pick https:\/\/doi.org\/10.1063\/1.5085364<\/p>\n\n\n\n
H. Kawashima, S. Ohmagari, H. Umezawa, and D. Takeuchi
Jpn. J. Appl. Phys. 58, SBDD17 (2019).<\/p>\n\n\n\n
H. Takagi, Y. Kurashima, T. Matsumae, T. Ito, H. Watanabe, H. Umezawa, and S. Ohmagari
ECS Transactions 86 (2018) 169. DOI: 10.1149\/08605.0169ecst<\/p>\n\n\n\n
S. Ohmagari, H. Yamada, N. Tsubouchi, H. Umezawa, A. Chayahara, S. Tanaka, and Y. Mokuno
Appl. Phys. Lett. 113 (2018) 032108. https:\/\/doi.org\/10.1063\/1.5040658<\/p>\n\n\n\n
K. Driche, H. Umezawa, S. Ohmagari, H. Okumura, Y. Mokuno, and E. Gheeraert
Mater. sci. forum. 924 (2018) 935. DOI: 10.4028\/www.scientific.net\/MSF.924.935<\/p>\n\n\n\n
Shinya Ohmagari
In: S. Koizumi, H. Umezawa, J. Pernot, M. Suzuki (Eds), Power Electronics Device Applications of Diamond Semiconductors, A volume in Woodhead Publishing Series in Electronic and Optical Materials, 99 – 117 Chapter 2.1 (Elsevier 2018).<\/p>\n\n\n\n
Hiroki Kato, H. Yamada, S. Ohmagari, A. Chayahara, Y. Mokuno, Y. Fukuyama, N. Fujiwara, K. Miyanishi, Y. Hironaka, and K. Shigemori
Diam. Relat. Mater. 86 (2018) 15.<\/p>\n\n\n\n
R. Chaleawpong, N. Promros, P. Charoenyuenyao, T. Hanada, S. Ohmagari, A. Zkria, and T. Yoshitake
J. Nanoelect. Nanotechnol.(2017) to be published<\/p>\n\n\n\n
T. Hanada, S. Ohmagari, A. Zkria, and T. Yoshitake
J. Phys. Conf. Series (2017) to be published<\/p>\n\n\n\n
S. Ohmagari, H. Yamada, H. Umezawa, N. Tsubouchi, A. Chayahara, and Y. Mokuno
Diamond and Related Materials 81 (2018) 33. https:\/\/doi.org\/10.1016\/j.diamond.2017.11.003<\/p>\n\n\n\n
S. Ohmagari, M. Ogura, H. Umezawa, and Y. Mokuno
Journal of Crystal Growth 479 (2017) 52. https:\/\/doi.org\/10.1016\/j.jcrysgro.2017.09.022<\/p>\n\n\n\n
H. Umezawa, S. Ohmagari, Y. Mokuno, and J.H. Kaneko
IEEE Conference Publications, ISPSD (2017) 379-382. 10.23919\/ISPSD.2017.7988983<\/p>\n\n\n\n
S. Ohmagari, T. Matsumoto, H. Umezawa, and Y. Mokuno
Thin Solid Films 615 (2016) 239. http:\/\/dx.doi.org\/10.1016\/j.tsf.2016.07.017<\/p>\n\n\n\n
T. Hanada, S. Ohmagari, A. Zkria, N. Promros, and T. Yoshitake
J. Nanosci. Nanotech. 17 (2016) 3348. https:\/\/doi.org\/10.1166\/jnn.2017.14104<\/p>\n\n\n\n
S. Ohmagari, T. Matsumoto, H. Umezawa, and Y. Mokuno
MRS Advances 1 (2016) 3489. https:\/\/doi.org\/10.1557\/adv.2016.471<\/p>\n\n\n\n
H. Yamada, A. Chayahara, S. Ohmagari, Y. Mokuno
Diamond Relat. Mater. 63 (2016) 17. doi:10.1016\/j.diamond.2015.09.016<\/p>\n\n\n\n
K. Srimongkon, S. Ohmagari (C.A.), Y. Kato, V. Amornkitbamrung, and S. Shikata
Diamond Relat. Mater. 63 (2016) 21. doi: 10.1016\/j.diamond.2015.09.014<\/p>\n\n\n\n
Y. Katamune, S. Takeichi, S. Ohmagari, and T. Yoshitake
J. Vac. Sci. Technol. A 33 (2015) 061514.<\/p>\n\n\n\n
S. Ohmagari, K. Srimongkon, H. Yamada, H. Umezawa, N. Tsubouchi, A. Chayahara, S. Shikata, and Y. Mokuno
Diamond Relat. Mater. 58 (2015) 110.<\/p>\n\n\n\n
Y. Katamune, S. Takeichi, S. Ohmagari, H. Setoyama, and T. Yoshitake
Trans. Mat. Res. Soc. 40 (2015) 243.<\/p>\n\n\n\n
S. Ohmagari, K. Srimongkon, V. Amornkitbamrung, H. Yamada, A. Chayahara, and S. Shikata
Trans. Mat. Res. Soc. Jpn, 40 (2015) 47.<\/p>\n\n\n\n
S. Ohmagari, H. Yamada, H. Umezawa, A. Chayahara, T. Teraji, and S. Shikata
Diamond Relat. Mater. 48 (2014) 19.<\/p>\n\n\n\n
S. Ohmagari, T. Hanada, Y. Katamune, S. Al-Riyami, and T. Yoshitake
Jpn. J. Appl. Phys. 53 (2014) 050307.<\/p>\n\n\n\n
Y. Katamune, S. Ohmagari, S. Al-Riyami, S. Takagi, M. Shaban, and T. Yoshitake
Jpn. J. Appl. Phys., 52 (2013) 065801.<\/p>\n\n\n\n
Y. Katamune, S. Ohmagari, H. Setoyama, K. Sumitani, Y. Hirai, and T. Yoshitake
ECS Transactions 50 (2013) 23.<\/p>\n\n\n\n
\u5927\u66f2 \u65b0\u77e2\uff0c\u82b1\u7530 \u8ce2\u5fd7\uff0c\u7247\u5b97 \u512a\u8cb4\uff0c\u5409\u7530 \u667a\u535a\uff0c\u5409\u6b66 \u525b
\u65e5\u672c\u7d50\u6676\u6210\u9577\u5b66\u4f1a\u8a8c, Vol. 39, No. 4 (2012) pp. 196-203.<\/p>\n\n\n\n
\u8868\u9762\u79d1\u5b66\uff0cVol. 33, No. 10 (2012) pp. 583-588.<\/p>\n\n\n\n
S. Ohmagari and T. Yoshitake
Appl. Phys. Express 6 (2012) 065202.<\/p>\n\n\n\n
S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 090123.
Selected Topics in Applied Physics (STAP) \u201cDiamond Semiconductors: from Materials to Devices\u201d<\/p>\n\n\n\n
Y. Katamune, S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 078003.<\/p>\n\n\n\n
Y. Katamune, S. Ohmagari, I. Suzuki, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 068002.<\/p>\n\n\n\n
S. Ohmagari, Y. Katamune, H. Ichinose, and T. Yoshitake
Jpn. J. Appl. Phys. 51 (2012) 025503.<\/p>\n\n\n\n
S. Ohmagari, T. Teraji, and Y. Koide
J. Appl. Phys. 110 (2011) 056105.<\/p>\n\n\n\n
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Jpn. J. Appl. Phys. 50 (2011) 08JD05.<\/p>\n\n\n\n
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Diamond Relat. Mater. 20 (2011) 1072.<\/p>\n\n\n\n
S. Ohmagari, S.Al-Riyami, and T. Yoshitake
Jpn. J. Appl. Phys. 50 (2011) 03510.<\/p>\n\n\n\n
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Appl. Phys. Express, 3 (2010) 115102.<\/p>\n\n\n\n
S. Ohmagari, T. Yoshitake, A. Nagano, R. Ohtani, H. Setoyama, E. Kobayashi, and K. Nagayama
Diamond Rel. Mater. 19 (2010) 911.<\/p>\n\n\n\n
S. Al-Riyami, S. Ohmagari, and T. Yoshitake
Diamond Rel. Mater. 19 (2010) 510.<\/p>\n\n\n\n
S. Ohmagari, T. Yoshitake , A. Nagano, R. Ohtani, H. Setoyama, E. Kobayashi, T. Hara, and K. Nagayama
Jpn. J. Appl. Phys. 49 (2010) 031302.<\/p>\n\n\n\n
S. Ohmagari, T. Yoshitake, A. Nagano, S. AL-Riyami, R. Ohtani, H. Setoyama, E. Kobayashi and K. Nagayama
J. Nanomater. 2009 (2010) 876561.<\/p>\n\n\n\n
T. Yoshitake, A. Nagano, S. Ohmagari, M. Itakura, N. Kuwano, R. Ohtani, H. Setoyama, E. Kobayashi, and K. Nagayama
Jpn. J. Appl. Phys., vol. 48, No. 2 (2009) 020222.<\/p>\n","protected":false},"excerpt":{"rendered":"